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Atomic Force Microscopy and High-Resolution RBS Investigation of the Surface Modification of Magnetron Sputter-Etched Si(111) in an Argon Plasma at Different Pressures

Deenapanray, Prakash; Hillie, K; Demangel, Caroline; Ridgway, Mark C

Description

The surface morphology and metallic contamination of magnetron sputter-etched Si(111) was investigated by atomic force microscopy (AFM) and high-resolution Rutherford backscattering spectroscopy (RBS) as a function of Ar plasma pressure. The root-mean-square roughness (Rrms) of plasma-etched Si decreased monotonically from 36±28 angstroms at 2×10-3 mbar to 13±6 angstroms at 2×10-2 mbar. High-resolution RBS showed that metallic impurity contamination increased with increasing plasma pressure,...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93675
Source: Surface and Interface Analysis
DOI: 10.1002/(SICI)1096-9918(199910)27:10<881::AID-SIA644>3.0.CO;2-6

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