Electrical Characterization and Annealing Properties of Electrically Active Defects Introduced in n-Si During Sputter Etching in an Ar-plasma
Deep level transient spectroscopy was used in conjunction with current-voltage and capacitance-voltage measurements to characterize sputter etching-induced defects in n-Si as a function of Ar-plasma pressure. The reverse current, at a bias of 1 V, of Pd Schottky barrier diodes fabricated on the etched samples increased monotonically with decreasing plasma pressure and their barrier heights followed the opposite trend. Sputter etching created six prominent electron traps, including the VO and VP...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Deenapanray_Electrical_Characterization_1999.pdf||195.38 kB||Adobe PDF||Request a copy|
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