Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature
The strain relief observed in GeSi/Si strained-layer heterostructures irradiated with MeV ions at elevated temperature (253°C) is shown to be consistent with the accumulation of excess vacancies in the alloy layer. Partial recovery of the asgrown strain
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Glasko_Defects_Formed_During_1_MeV_Si_1999.pdf||303.36 kB||Adobe PDF||Request a copy|
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