Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature
Glasko, J; Elliman, Robert; Zou, Jin; Cockayne, David John Hugh; Fitz Gerald, John
Description
The strain relief observed in GeSi/Si strained-layer heterostructures irradiated with MeV ions at elevated temperature (253°C) is shown to be consistent with the accumulation of excess vacancies in the alloy layer. Partial recovery of the asgrown strain
| Collections | ANU Research Publications |
|---|---|
| Date published: | 1999 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/93673 |
| Source: | Nuclear Instruments and Methods in Physics Research: Section B |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Glasko_Defects_Formed_During_1_MeV_Si_1999.pdf | 303.36 kB | Adobe PDF | Request a copy |
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