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Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature

Glasko, J; Elliman, Robert; Zou, Jin; Cockayne, David John Hugh; Fitz Gerald, John

Description

The strain relief observed in GeSi/Si strained-layer heterostructures irradiated with MeV ions at elevated temperature (253°C) is shown to be consistent with the accumulation of excess vacancies in the alloy layer. Partial recovery of the asgrown strain

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93673
Source: Nuclear Instruments and Methods in Physics Research: Section B

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