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Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire

Fu, Y; Willander, M; Liu, Qiu Xiang; Lu, W; Shen, S; Yuan, Shu; Jagadish, Chennupati; Tan, Hark Hoe

Description

We report the successful fabrication of a V-groove Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states...[Show more]

dc.contributor.authorFu, Y
dc.contributor.authorWillander, M
dc.contributor.authorLiu, Qiu Xiang
dc.contributor.authorLu, W
dc.contributor.authorShen, S
dc.contributor.authorYuan, Shu
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T23:34:55Z
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/1885/93671
dc.description.abstractWe report the successful fabrication of a V-groove Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.
dc.publisherAcademic Press
dc.sourceSuperlattices and Microstructures
dc.subjectKeywords: Band structure; Electron transitions; Emission spectroscopy; Photoluminescence; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor device manufacture; Thermal effects; Electron energy sublevels; Semiconductor quantum wires
dc.titleEnergy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume26
dc.date.issued1999
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub25062
local.type.statusPublished Version
local.contributor.affiliationFu, Y, Gotenburg University
local.contributor.affiliationWillander, M, Gotenburg University
local.contributor.affiliationLiu, Qiu Xiang, Guangdong University of Technology
local.contributor.affiliationLu, W, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationShen, S, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYuan, Shu, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage307
local.bibliographicCitation.lastpage315
local.identifier.doi10.1006/spmi.1999.0783
dc.date.updated2015-12-12T09:37:56Z
local.identifier.scopusID2-s2.0-0033340372
CollectionsANU Research Publications

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