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Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers

Fu, Lan; Tan, Hoe Hark; Johnston, Michael B; Gal, Michael; Jagadish, Chennupati

Description

The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93670
Source: Journal of Applied Physics

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