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Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators

Cohen, M; Jagadish, Chennupati; Tan, Hark Hoe


The effect of ion implantation-induced interdiffusion on the resonant wavelength of GaAs/AlxOy distributed Bragg reflectors is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to redshift. Shifts of more than 60 nm could be achieved for center wavelengths around 800 nm. A model is proposed to explain this behavior. This model agrees well with previous lateral oxidation studies.

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
Source: Journal of Applied Physics


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