Negative Photoconductivity in SiO2 Films Containing Si Nanocrystals
Metal-insulator-semiconductor structures containing Si nanocrystals were fabricated by evaporating a Au layer onto the surface of ion implanted SiO2 films and applying an In-Ga eutectic to the sample after oxide layer removal to form a rear side contact.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Choi_Negative_Photoconductivity_in_1999.pdf||409.02 kB||Adobe PDF||Request a copy|
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