The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2
Cheylan, S; Manson, Neil; Elliman, Robert
Description
Photoluminescence from Si implanted silica is studied as a function of ion dose and annealing ambient. The photoluminescence emission intensity from samples as-implanted and after annealing at 1000°C in Ar is shown to exhibit a distinct maximum as a func
| Collections | ANU Research Publications |
|---|---|
| Date published: | 1999 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/93666 |
| Source: | Nuclear Instruments and Methods in Physics Research: Section B |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Cheylan_The_effect_of_ion_dose_and_1999.pdf | 121.57 kB | Adobe PDF | Request a copy |
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