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The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2

Cheylan, S; Manson, Neil; Elliman, Robert

Description

Photoluminescence from Si implanted silica is studied as a function of ion dose and annealing ambient. The photoluminescence emission intensity from samples as-implanted and after annealing at 1000°C in Ar is shown to exhibit a distinct maximum as a func

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93666
Source: Nuclear Instruments and Methods in Physics Research: Section B

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