The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2
Photoluminescence from Si implanted silica is studied as a function of ion dose and annealing ambient. The photoluminescence emission intensity from samples as-implanted and after annealing at 1000°C in Ar is shown to exhibit a distinct maximum as a func
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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