Implantation-induced Amorphization of InP Characterised with perturbed Angular Correlation
The perturbed angular correlation (PAC) technique has been used to characterize the implantation-induced crystal line-to-amorphous transformation in InP. Radioactive 111In probes were first introduced in InP substrates which were then irradiated with Ge ions over an ion-dose range extending 2 orders of magnitude beyond that required for amorphization. Crystalline, disordered and amorphous probe environments were subsequently identified with PAC. The dose dependence of the relative fractions of...[Show more]
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|Source:||Applied Physics Letters|
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