The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation
Ion implantation into Si has been used to produce near-surface, amorphous Si-N layers with the nitrogen content both below and exceeding Si3N4 stoichiometry. Iron has been introduced into some of these layers to study the effect of Fe on subsequent crystallisation to α-Si3N4. Rutherford backscattering and channeling, X-ray diffraction and cross-sectional transmission electron microscopy have been used to analyse these implanted samples before and after annealing to 1000°C. These results provide...[Show more]
|Collections||ANU Research Publications|
|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Li_The_Role_of_Fe_on_the_1999.pdf||233.31 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.