Li, Zheng Feng; Wong-Leung, Yin-Yin (Jennifer); Deenapanray, Prakash; Conway, Martin; Chivers, D; Fitz Gerald, John; Williams, James
Ion implantation into Si has been used to produce near-surface, amorphous Si-N layers with the nitrogen content both below and exceeding Si3N4 stoichiometry. Iron has been introduced into some of these layers to study the effect of Fe on subsequent crystallisation to α-Si3N4. Rutherford backscattering and channeling, X-ray diffraction and cross-sectional transmission electron microscopy have been used to analyse these implanted samples before and after annealing to 1000°C. These results provide...[Show more]
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