Local structures of Ga atoms in Amorphous Silicon and Hydrogenated Amorphous Silicon Before and After Synchrotron X-ray Irradiation
The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from <3.5 to ~3.80 atoms...[Show more]
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|Source:||Applied Physics Letters|
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