Skip navigation
Skip navigation

Local structures of Ga atoms in Amorphous Silicon and Hydrogenated Amorphous Silicon Before and After Synchrotron X-ray Irradiation

Yu, Kin Man; Walukiewicz, W; Muto, S; Jin, H-C; Abelson, J. R.; Clerc, C; Glover, Christopher; Ridgway, Mark C


The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from <3.5 to ~3.80 atoms...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
Source: Applied Physics Letters


File Description SizeFormat Image
01_Yu_Local_structures_of_Ga_atoms_1999.pdf403.29 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator