Diffusion and Transient Trapping of Metals in Silicon
In this study, the transport of ion-implanted metals to cavities and subsequent metal dissolution have been examined for short- and long-annealing times using Rutherford backscattering and channeling, transmission electron microscopy, and neutron activation analysis. A band of nanocavities in Si is found to be a very efficient sink for implanted Au and Cu during short-time annealing. In this case, the system appears to be in pseudoequilibrium where the fraction of soluble metals is well below...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B|
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