Diffusion and Transient Trapping of Metals in Silicon
Wong-Leung, Jennifer; Williams, James; Kinomura, A; Nakano, Yukihiro; Hayashi, Yasuhiko; Eaglesham, D
Description
In this study, the transport of ion-implanted metals to cavities and subsequent metal dissolution have been examined for short- and long-annealing times using Rutherford backscattering and channeling, transmission electron microscopy, and neutron activation analysis. A band of nanocavities in Si is found to be a very efficient sink for implanted Au and Cu during short-time annealing. In this case, the system appears to be in pseudoequilibrium where the fraction of soluble metals is well below...[Show more]
Collections | ANU Research Publications |
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Date published: | 1999 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/93601 |
Source: | Physical Review B |
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