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Diffusion and Transient Trapping of Metals in Silicon

Wong-Leung, Yin-Yin (Jennifer); Williams, James; Kinomura, A; Nakano, Yukihiro; Hayashi, Yasuhiko; Eaglesham, D

Description

In this study, the transport of ion-implanted metals to cavities and subsequent metal dissolution have been examined for short- and long-annealing times using Rutherford backscattering and channeling, transmission electron microscopy, and neutron activation analysis. A band of nanocavities in Si is found to be a very efficient sink for implanted Au and Cu during short-time annealing. In this case, the system appears to be in pseudoequilibrium where the fraction of soluble metals is well below...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93601
Source: Physical Review B

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