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The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon

Williams, James; Conway, Martin; Wong-Leung, Yin-Yin (Jennifer); Deenapanray, Prakash; Petravic, Mladen; Brown, Richard Alan; Eaglesham, D; Jacobson, D


The effect of oxygen implanted into epitaxial Si layers on the ability to getter Au to nanocavities, previously formed by H implantation and annealing, has been studied by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectrometry. We demonstrate that oxygen is gettered to cavities during extended annealing at 950 °C. Furthermore, the arrival of oxygen at cavities is not only shown to inhibit subsequent attempts to getter Au to cavities, but also to eject...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
Source: Applied Physics Letters


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