Skip navigation
Skip navigation

The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon

Williams, James; Conway, Martin; Wong-Leung, Yin-Yin (Jennifer); Deenapanray, Prakash; Petravic, Mladen; Brown, Richard Alan; Eaglesham, D; Jacobson, D

Description

The effect of oxygen implanted into epitaxial Si layers on the ability to getter Au to nanocavities, previously formed by H implantation and annealing, has been studied by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectrometry. We demonstrate that oxygen is gettered to cavities during extended annealing at 950 °C. Furthermore, the arrival of oxygen at cavities is not only shown to inhibit subsequent attempts to getter Au to cavities, but also to eject...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93600
Source: Applied Physics Letters

Download

File Description SizeFormat Image
01_Williams_The_Role_of_Oxygen_on_the_1999.pdf478.71 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator