The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon
Williams, James; Conway, Martin; Wong-Leung, Jennifer; Deenapanray, Prakash; Petravic, Mladen; Brown, Richard Alan; Eaglesham, D; Jacobson, D
Description
The effect of oxygen implanted into epitaxial Si layers on the ability to getter Au to nanocavities, previously formed by H implantation and annealing, has been studied by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectrometry. We demonstrate that oxygen is gettered to cavities during extended annealing at 950 °C. Furthermore, the arrival of oxygen at cavities is not only shown to inhibit subsequent attempts to getter Au to cavities, but also to eject...[Show more]
Collections | ANU Research Publications |
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Date published: | 1999 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/93600 |
Source: | Applied Physics Letters |
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