Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters
Details of microindentation of silicon, such as the semiconductor-to-metal transformation, which takes place on loading, have been examined using spherical indenters. Various forms of silicon are studied, including heavily boron-doped wafers and silicon damaged and amorphized by ion implantation as well as material containing dislocations. Results indicate that only silicon, which contains high concentrations of point defects or is amorphous, exhibits mechanical properties that differ...[Show more]
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|Source:||Journal of Materials Research|
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