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Dose Dependence of Room Temperature Photoluminescence from Si Implanted SiO2

Cheylan, S; Manson, Neil; Elliman, Robert

Description

Photoluminescence from Si implanted silica is studied as a function of Si fluence and Si concentration profile in order to assess the effect of particle size and size distribution on emission spectra. Peaked (skewed Gaussian) concentration profiles were produced by implanting with 400 keV Si ions and uniform Si profiles were produced by a multi-energy implant sequences. Both as-implanted and annealed samples are shown to exhibit a distinct maximum in the emission intensity as a function of ion...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93413
Source: Journal of Luminescence

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