Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon
Zhu, Xiaohua; Williams, James; McCallum, J
Description
Ultra-high-dose Si ion implantation (1×1018 cm-2) into both amorphous and crystalline Si has been studied as a function of implantation temperature from liquid nitrogen to 250°C. The samples were analysed before and after 600°C annealing by Rutherford
| Collections | ANU Research Publications |
|---|---|
| Date published: | 1999 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/93410 |
| Source: | Nuclear Instruments and Methods in Physics Research: Section B |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Zhu_Structural_Changes_in_1999.pdf | 214.91 kB | Adobe PDF | Request a copy |
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