Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon
Ultra-high-dose Si ion implantation (1×1018 cm-2) into both amorphous and crystalline Si has been studied as a function of implantation temperature from liquid nitrogen to 250°C. The samples were analysed before and after 600°C annealing by Rutherford
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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