Jagadish, Chennupati; Lederer, Maximilian; Luther-Davies, Barry; Zou, Jin; Cockayne, David John Hugh; Haiml, M; Siegner, U; Keller, U; Tan, Hark Hoe
To shorten the response times of GaAs-based saturable absorber structures, arsenic ion implantation with thermal annealing was employed. Results showed that both the concentration and type of residual defects determines the ultimate shortening of the carrier lifetime. To eliminate amorphization, poor recrystallization and polycrystalline layers after annealing, high implantation doses should be avoided since the response time is increased under these conditions.
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