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Reduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation

Shan, Wei; Yu, Kin Man; Walukiewicz, W; Ager, J W; Haller, E E; Ridgway, Mark C

Description

The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93405
Source: Applied Physics Letters

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