Reduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation
The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Shan_Reduction_of_Band-Gap_Energy_1999.pdf||409.61 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.