Reduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation
The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.
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|Source:||Applied Physics Letters|
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