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Ion implantation in bulk semi-insulating 4H-SiC

Rao, Mulpuri V; Tucker, J; Ridgway, Mark C; Holland, O; Mittereder, J

Description

Multiple energy N (at 500 °C) and Al (at 800 °C) ion implantations were performed into bulk semi-insulating 4H-SiC at various doses to obtain uniform implant concentrations in the range 1 × 1018-1 × 1020 cm-3 to a depth of 1.0 μm. Implant anneals wer

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93400
Source: Journal of Applied Physics

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