S and Si ion implantation in GaSb grown on GaAs
Single and multiple energy S and Si ion implantations were performed at room temperature (RT) and 200°C into GaSb epitaxial layers grown on semi-insulating GaAs substrates. The implanted material was annealed with a Si3N4 cap at 400-600°C for 5 min. Sec
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|Source:||Journal of Applied Physics|
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