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S and Si ion implantation in GaSb grown on GaAs

Rao, Mulpuri V; Berry, Andrew John; Do, Thang Q; Ridgway, Mark C; Chi, P H

Description

Single and multiple energy S and Si ion implantations were performed at room temperature (RT) and 200°C into GaSb epitaxial layers grown on semi-insulating GaAs substrates. The implanted material was annealed with a Si3N4 cap at 400-600°C for 5 min. Sec

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93399
Source: Journal of Applied Physics

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