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Ion implantation of SiC and GaN

Papanicolaou, N; Rao, Mulpuri V; Molnar, B; Tucker, J; Edwards, Alasdair; Holland, O; Ridgway, Mark C

Description

The electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing.

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93396
Source: Nuclear Instruments and Methods in Physics Research: Section B

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