Ion implantation of SiC and GaN
The electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing.
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Papanicolaou_Ion_implantation_of_SiC_and_1999.pdf||108.87 kB||Adobe PDF||Request a copy|
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