Deep Level Properties of Erbium Implanted Epitaxially Grown SiGe
We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si0.96Ge0.04 during 180 keV erbium ion implantation (fluence -1×1010 cm-2 ). Five defects with discrete energy levels, rangi
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Mamor_Deep_Level_Properties_of_1999.pdf||121.65 kB||Adobe PDF||Request a copy|
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