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Deep Level Properties of Erbium Implanted Epitaxially Grown SiGe

Mamor, M; Auret, Francois D; Goodman, S; Brink, J; Hayes, M; Meyer, F; Vantomme, A; Langouche, G; Deenapanray, Prakash

Description

We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si0.96Ge0.04 during 180 keV erbium ion implantation (fluence -1×1010 cm-2 ). Five defects with discrete energy levels, rangi

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93392
Source: Nuclear Instruments and Methods in Physics Research: Section B

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