Inhibited carrier transfer in ensembles of isolated quantum dots
We report significant differences in the temperature-dependent and time-resolved photoluminescence (PL) from low and high surface density InxGa1-xAs/GaAs quantum dots (QD's). QD's in high densities are found to exhibit an Arrhenius dependence of the PL intensity, while low-density (isolated) QD's display more complex temperature-dependent behavior. The PL temperature dependence of high density QD samples is attributed to carrier thermal emission and recapture into neighboring QD's. Conversely,...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.