Recombination at the interface between silicon and stoichiometric plasma silicon nitride
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Description
The injection level dependence of the effective surface recombination velocity (Seff) for the interface between crystalline silicon and stoichiometric silicon nitride, prepared by high-frequency direct plasma enhanced chemical vapour deposition (PECVD), has been comprehensively studied. A wide variety of substrate resistivities for both n-type and p-type dopants have been investigated for minority carrier injection levels (Δn) between 1012 and 1017 cm-3. Effective lifetimes of 10 ms have been...[Show more]
Collections | ANU Research Publications |
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Date published: | 2002 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/93356 |
Source: | Semiconductor Science and Technology |
DOI: | 10.1088/0268-1242/17/2/314 |
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