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Recombination at the interface between silicon and stoichiometric plasma silicon nitride

Kerr, Mark; Cuevas, Andres


The injection level dependence of the effective surface recombination velocity (Seff) for the interface between crystalline silicon and stoichiometric silicon nitride, prepared by high-frequency direct plasma enhanced chemical vapour deposition (PECVD), has been comprehensively studied. A wide variety of substrate resistivities for both n-type and p-type dopants have been investigated for minority carrier injection levels (Δn) between 1012 and 1017 cm-3. Effective lifetimes of 10 ms have been...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/17/2/314


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