Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation
Perturbed angular correlation (PAC) studies with radioactive 111 In probes in crystalline Ge substrates have previously established the presence of two distinct defective configurations following either electron or ion irradiation. Though such defects have been tentatively identified as In-vacancy (In-V) and In-interstitial (In-I) configurations, an unambiguous assignment is still lacking and conflicting interpretations are apparent. For the present report, a series of experiments have been...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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