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Understanding carrier trapping in multicrystalline silicon

MacDonald, Daniel; Cuevas, Andres

Description

The physical origin of minority carrier trapping centers in multicrystalline silicon is explored in both gettered and non-gettered material. The experimental evidence suggests that there are two types of trap present. One species can be removed by gettering and is related to the presence of boron-impurity pairs or complexes. The other type is impervious to gettering and is correlated to the dislocation density. Annealing experiments reveal that the trapping centers caused by boron-impurity...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/92903
Source: Solar Energy Materials and Solar Cells
DOI: 10.1016/S0927-0248(00)00134-3

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