MacDonald, Daniel; Cuevas, Andres
The physical origin of minority carrier trapping centers in multicrystalline silicon is explored in both gettered and non-gettered material. The experimental evidence suggests that there are two types of trap present. One species can be removed by gettering and is related to the presence of boron-impurity pairs or complexes. The other type is impervious to gettering and is correlated to the dislocation density. Annealing experiments reveal that the trapping centers caused by boron-impurity...[Show more]
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