Weber, Klaus; Catchpole, Kylie
We have examined the selective growth of silicon on (1 0 0) oriented, oxidized silicon substrates containing two mutually perpendicular sets of line seeds, forming a continuous square mesh. The influence of the cooling rate and the spacing of the lines was investigated, in order to determine conditions which result in layers of constant thickness over the entire surface. It is found that, as the line spacing is decreased, higher growth rates are required to meet this criterion. It was possible...[Show more]
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