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Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

Schmidt, Jan; Cuevas, Andres

Description

In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1-31 Ω cm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/92069
Source: Journal of Applied Physics

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