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ICP Dry Etching of ZnO and Effects of Hydrogen

Ip, K; Overberg, M E; Baik, K W; Wilson, R G; Kucheyev, Sergei; Williams, James; Jagadish, Chennupati; Ren, Fan; Heo, Y W; Norton, D P; Zavada, J M; Pearton, S J


Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface m

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Solid-State Electronics
DOI: 10.1016/S0038-1101(03)00211-9


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