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The Effect of Potassium on the Rate of Solid Phase Epitaxy in Silicon

Liu, A C Y; McCallum, Jeffrey C; Deenapanray, Prakash

Description

Rutherford backscattering spectroscopy and ion channeling and secondary ion mass spectroscopy have been used to study the evolution of a potassium profile in amorphous silicon during solid phase epitaxial crystallisation. The potassium profile exhibits some propensity for refinement in front of the crystallising interface for the concentrations used in this experiment. Also, the potassium is partially substitutional in the crystallised layer. Preliminary studies on the influence of potassium on...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
URI: http://hdl.handle.net/1885/91636
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)01178-8

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