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Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition

Deenapanray, Prakash; Lay, M; Aberg, D; Svensson, Bengt Gunnar; Auret, Francois D; Jagadish, Chennupati; Tan, Hark Hoe

Description

Three dominant electron traps S1 (Ec - 0.23 eV), S2* (Ec - 0.53 eV), and S4 (Ec - 0.74 eV) are introduced in SiO2/n-GaAs after rapid thermal annealing (RTA). A defect S3 (Ec - 0.72 eV) is observed in uncapped and annealed samples only. The S2* arises from the superposition of two defects, of which S2 (Ec - 0.46eV) can be resolved using filling pulse widths <1 ms. The intensities of S1, S2*, and S4 show Arrhenius-like dependencies on the RTA temperature. We argue that the defects are formed as a...[Show more]

dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorLay, M
dc.contributor.authorAberg, D
dc.contributor.authorSvensson, Bengt Gunnar
dc.contributor.authorAuret, Francois D
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T23:22:51Z
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/1885/91635
dc.description.abstractThree dominant electron traps S1 (Ec - 0.23 eV), S2* (Ec - 0.53 eV), and S4 (Ec - 0.74 eV) are introduced in SiO2/n-GaAs after rapid thermal annealing (RTA). A defect S3 (Ec - 0.72 eV) is observed in uncapped and annealed samples only. The S2* arises from the superposition of two defects, of which S2 (Ec - 0.46eV) can be resolved using filling pulse widths <1 ms. The intensities of S1, S2*, and S4 show Arrhenius-like dependencies on the RTA temperature. We argue that the defects are formed as a result of an increase in the ratio of As:Ga in the near-surface region of the GaAs layers. The electronic and annealing properties of S4 show that it is a member of the EL2 family of defects. The removal of S1 and S2*, as well as the introduction of secondary defects, during isochronal annealing experiments is also discussed.
dc.publisherElsevier
dc.sourcePhysica B
dc.subjectKeywords: Crystal defects; Deep level transient spectroscopy; Epitaxial growth; Metallorganic chemical vapor deposition; Rapid thermal annealing; Semiconducting gallium arsenide; Silica; Impurity-free disordering (IFD); Electron traps Deep-level transient spectroscopy; Defects; GaAs; Impurity-free disordering
dc.titleDeep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume308-310
dc.date.issued2001
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub22448
local.type.statusPublished Version
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLay, M, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationAberg, D, Royal Institute of Technology
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo
local.contributor.affiliationAuret, Francois D, University of Pretoria
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage776
local.bibliographicCitation.lastpage779
local.identifier.doi10.1016/S0921-4526(01)00836-5
dc.date.updated2015-12-12T09:12:48Z
local.identifier.scopusID2-s2.0-0035672007
CollectionsANU Research Publications

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