Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Three dominant electron traps S1 (Ec - 0.23 eV), S2* (Ec - 0.53 eV), and S4 (Ec - 0.74 eV) are introduced in SiO2/n-GaAs after rapid thermal annealing (RTA). A defect S3 (Ec - 0.72 eV) is observed in uncapped and annealed samples only. The S2* arises from the superposition of two defects, of which S2 (Ec - 0.46eV) can be resolved using filling pulse widths <1 ms. The intensities of S1, S2*, and S4 show Arrhenius-like dependencies on the RTA temperature. We argue that the defects are formed as a...[Show more]
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