Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4-MeV C ions and 6-MeV Si ions has been investigated by deep level transient spectroscopy (DLTS). It is found that the intensity of the DLTS signal for the doubly negative charge state of the divacancy [V2(=/-)] deviates from a one-to-one correlation with that of the singly negative charge state of the divacancy [V2(-/0)] and decreases, compared to V2(-/0), with increasing ion mass. Capture kinetics...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B|
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