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Optical Studies of Ion-Implantation Centres in Silicon

Davies, G; Harding, Ruth E; Jin, Tan; Mainwood, A; Wong-Leung, Yin-Yin (Jennifer)

Description

Photoluminescence enables a very large number of defects to be observed in ion-implanted silicon, over dose ranges of up to at least 1014 cm-2. Simple arguments using the widths of the luminescence lines suggest that the defects lie in the heavily damaged part of the implanted crystal. We show that by combining optical absorption measurements on neutron-irradiated samples with luminescence measurements on implanted samples, the relative concentrations of ion-implantation defects may be...[Show more]

dc.contributor.authorDavies, G
dc.contributor.authorHarding, Ruth E
dc.contributor.authorJin, Tan
dc.contributor.authorMainwood, A
dc.contributor.authorWong-Leung, Yin-Yin (Jennifer)
dc.date.accessioned2015-12-13T23:22:50Z
dc.date.available2015-12-13T23:22:50Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/91630
dc.description.abstractPhotoluminescence enables a very large number of defects to be observed in ion-implanted silicon, over dose ranges of up to at least 1014 cm-2. Simple arguments using the widths of the luminescence lines suggest that the defects lie in the heavily damaged part of the implanted crystal. We show that by combining optical absorption measurements on neutron-irradiated samples with luminescence measurements on implanted samples, the relative concentrations of ion-implantation defects may be determined. The luminescence spectra are shown to change considerably with temperature over the limited range 10-40 K. In this temperature range, the total number of photons emitted by the layer is conserved, further implying that the strengths of the signals from each defect are proportional to the concentrations of those defects. Some luminescence lines can be linked to DLTS signals, allowing the high resolution capabilities of luminescence to be combined with the ability of DLTS to measure concentrations, providing powerful joint probes into the properties of the implanted regions.
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Crystal defects; Deep level transient spectroscopy; Light absorption; Neutron irradiation; Photoluminescence; Photons; Silicon; Luminescence lines; Ion implantation Ion-implantation; Photoluminescence
dc.titleOptical Studies of Ion-Implantation Centres in Silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume186
dc.date.issued2002
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub22441
local.type.statusPublished Version
local.contributor.affiliationDavies, G, King's College London
local.contributor.affiliationHarding, Ruth E, King's College London
local.contributor.affiliationJin, Tan, King's College London
local.contributor.affiliationMainwood, A, King's College London
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage9
local.identifier.doi10.1016/S0168-583X(01)00867-9
dc.date.updated2015-12-12T09:12:43Z
local.identifier.scopusID2-s2.0-0036136416
CollectionsANU Research Publications

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