Optical Studies of Ion-Implantation Centres in Silicon
Photoluminescence enables a very large number of defects to be observed in ion-implanted silicon, over dose ranges of up to at least 1014 cm-2. Simple arguments using the widths of the luminescence lines suggest that the defects lie in the heavily damaged part of the implanted crystal. We show that by combining optical absorption measurements on neutron-irradiated samples with luminescence measurements on implanted samples, the relative concentrations of ion-implantation defects may be...[Show more]
|Collections||ANU Research Publications|
|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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