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Optical Studies of Ion-Implantation Centres in Silicon

Davies, G; Harding, Ruth E; Jin, Tan; Mainwood, A; Wong-Leung, Yin-Yin (Jennifer)

Description

Photoluminescence enables a very large number of defects to be observed in ion-implanted silicon, over dose ranges of up to at least 1014 cm-2. Simple arguments using the widths of the luminescence lines suggest that the defects lie in the heavily damaged part of the implanted crystal. We show that by combining optical absorption measurements on neutron-irradiated samples with luminescence measurements on implanted samples, the relative concentrations of ion-implantation defects may be...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
URI: http://hdl.handle.net/1885/91630
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)00867-9

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