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Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

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Pellegrino, P; Leveque, P; Kortegaard-Nielsen, H; Hallen, A; Wong-Leung, Jennifer; Jagadish, Chennupati; Svensson, Bengt Gunnar

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A new experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measurements

dc.contributor.authorPellegrino, P
dc.contributor.authorLeveque, P
dc.contributor.authorKortegaard-Nielsen, H
dc.contributor.authorHallen, A
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorSvensson, Bengt Gunnar
dc.date.accessioned2015-12-13T23:22:49Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/91627
dc.description.abstractA new experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measurements
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Computer simulation; Deep level transient spectroscopy; Ion implantation; Mathematical models; Point defects; Protons; Semiconducting boron; Interstitial depth profiles; Semiconducting silicon DLTS; Ion implantation; Point defects; Silicon
dc.titleSeparation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume186
dc.date.issued2002
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub22436
local.type.statusPublished Version
local.contributor.affiliationPellegrino, P, Royal Institute of Technology
local.contributor.affiliationLeveque, P, Royal Institute of Technology
local.contributor.affiliationKortegaard-Nielsen, H, Royal Institute of Technology
local.contributor.affiliationHallen, A, Royal Institute of Technology
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo
local.description.embargo2037-12-31
local.bibliographicCitation.startpage334
local.bibliographicCitation.lastpage338
local.identifier.doi10.1016/S0168-583X(01)00874-6
dc.date.updated2015-12-12T09:12:42Z
local.identifier.scopusID2-s2.0-0036134741
CollectionsANU Research Publications

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