Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
A new experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measurements
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Pellegrino_Separation_of_Vacancy_and_2002.pdf||144.97 kB||Adobe PDF||Request a copy|
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