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Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

Pellegrino, P; Leveque, P; Kortegaard-Nielsen, H; Hallen, A; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati; Svensson, Bengt Gunnar


A new experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measurements

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)00874-6


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