Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
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Pellegrino, P; Leveque, P; Kortegaard-Nielsen, H; Hallen, A; Wong-Leung, Jennifer; Jagadish, Chennupati; Svensson, Bengt Gunnar
Description
A new experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measurements
Collections | ANU Research Publications |
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Date published: | 2002 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/91627 |
Source: | Nuclear Instruments and Methods in Physics Research: Section B |
DOI: | 10.1016/S0168-583X(01)00874-6 |
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01_Pellegrino_Separation_of_Vacancy_and_2002.pdf | 144.97 kB | Adobe PDF | Request a copy |
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