Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

Pellegrino, P; Leveque, P; Kortegaard-Nielsen, H; Hallen, A; Wong-Leung, Jennifer; Jagadish, Chennupati; Svensson, Bengt Gunnar

doi:10.1016/S0168-583X(01)00874-6

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Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

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Pellegrino, P; Leveque, P; Kortegaard-Nielsen, H; Hallen, A; Wong-Leung, Jennifer ; Jagadish, Chennupati; Svensson, Bengt Gunnar

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A new experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measurements

Collections	ANU Research Publications
Date published:	2002
Type:	Journal article
URI:	http://hdl.handle.net/1885/91627
Source:	Nuclear Instruments and Methods in Physics Research: Section B
DOI:	10.1016/S0168-583X(01)00874-6

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Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

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