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Impurity Gettering by Cavities in Si Investigated with the PAC Technique

Bartels, J; Vianden, R; Ridgway, Mark C

Description

Layers of cavities in silicon produced by He implantation are a promising tool to prevent residual impurities, mainly transition metal atoms, to interact with implanted dopant atoms. The γ-γ perturbed angular correlation (PAC) technique is well suited t

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
URI: http://hdl.handle.net/1885/91625
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)01220-4

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