Impurity Gettering by Cavities in Si Investigated with the PAC Technique
Layers of cavities in silicon produced by He implantation are a promising tool to prevent residual impurities, mainly transition metal atoms, to interact with implanted dopant atoms. The γ-γ perturbed angular correlation (PAC) technique is well suited t
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Bartels_Impurity_Gettering_by_Cavities_2002.pdf||121.17 kB||Adobe PDF||Request a copy|
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