Skip navigation
Skip navigation
The system will be down for maintenance between 8:00 and 8:15am on Thursday 13, December 2018

Impurity Gettering by Cavities in Si Investigated with the PAC Technique

Bartels, J; Vianden, R; Ridgway, Mark C


Layers of cavities in silicon produced by He implantation are a promising tool to prevent residual impurities, mainly transition metal atoms, to interact with implanted dopant atoms. The γ-γ perturbed angular correlation (PAC) technique is well suited t

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)01220-4


File Description SizeFormat Image
01_Bartels_Impurity_Gettering_by_Cavities_2002.pdf121.17 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  27 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator