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Enhancement of the Etch Rate of CVD Diamond by Prior C and Ge Implantation

Leech, P W; Reeves, G K; Holland, A S; Ridgway, Mark C; Shanks, F

Description

Polycrystalline diamond films have been irradiated with C+ or Ge+ ions at doses in the range 5 × 1013-5 × 1015 ions/cm2. Analysis of the implanted surfaces by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
URI: http://hdl.handle.net/1885/91623
Source: Diamond and Related Materials
DOI: 10.1016/S0925-9635(02)00049-3

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