Response to phosphorus gettering of different regions of cast multicrystalline silicon ingots
Minority carrier lifetimes were measured to determine the effect of phosphorus gettering on cast multicrystalline silicon solar cell substrates from central and end regions of two different ingots. One ingot exhibited visibly inferior crystallographic structure and, correspondingly, showed lower lifetimes. Wafers from the bottom region of both ingots improved significantly after gettering, whilst those from the top experienced no lifetime increase. Defect etching revealed that the wafers from...[Show more]
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