Skip navigation
Skip navigation
The system will be down for maintenance between 8:00 and 8:15am on Wednesday 12, December 2018

Response to phosphorus gettering of different regions of cast multicrystalline silicon ingots

MacDonald, Daniel; Cuevas, Andres; Ferrazza, Francesca

Description

Minority carrier lifetimes were measured to determine the effect of phosphorus gettering on cast multicrystalline silicon solar cell substrates from central and end regions of two different ingots. One ingot exhibited visibly inferior crystallographic structure and, correspondingly, showed lower lifetimes. Wafers from the bottom region of both ingots improved significantly after gettering, whilst those from the top experienced no lifetime increase. Defect etching revealed that the wafers from...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/91603
Source: Solid-State Electronics

Download

File Description SizeFormat Image
01_MacDonald_Response_to_phosphorus_1999.pdf475.01 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  27 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator