Trapping of minority carriers in mulicrystalline silicon
Photoconductance measurements have shown anomalously high effective carrier lifetimes on cast multicrystalline silicon wafers. This anomaly is demonstrated as the result of minority carrier trapping, and is explained both quantitatively and qualitatively
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_MacDonald_Trapping_of_minority_carriers_1999.pdf||437.71 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.