Measurements of Si Ion Stopping in Amorphous Silicon
The stopping of 28Si ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the 28Si ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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