The application of photoconductance measurements of the effective lifetime of silicon wafers to determine the saturation current density of diffused emitter regions is reviewed. To illustrate the technique, a sequence of experiments is presented with phosphorus diffusions of various types: oxide passivated and unpassivated, lightly doped and heavily doped. Different material qualities (FZ, CZ and multicrystalline silicon) are considered, as well as different substrate resistivities. The...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.