The effect of emitter recombination on the effective lifetime of silicon wafers
The application of photoconductance measurements of the effective lifetime of silicon wafers to determine the saturation current density of diffused emitter regions is reviewed. To illustrate the technique, a sequence of experiments is presented with phosphorus diffusions of various types: oxide passivated and unpassivated, lightly doped and heavily doped. Different material qualities (FZ, CZ and multicrystalline silicon) are considered, as well as different substrate resistivities. The...[Show more]
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|Source:||Solar Energy Materials and Solar Cells|
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