Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Defects created in rapid thermally annealed (RTA) SiO2-capped epitaxial GaAs layers grown by metal-organic chemical vapor deposition have been investigated by deep level transient spectroscopy. RTA introduced four electron traps S1 (Ec -0.23 eV), S2 (Ec-0.46eV), S3 (Ec -0.72eV), and S4 (Ec -0.74eV). S1 may be the so-called EL9 defect. We propose that S2 is a defect complex involving the Ga vacancy and Si dopant atoms, VGa-SiGa, and associate it with the EL5. S2 is introduced almost uniformly...[Show more]
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|Source:||Applied Physics Letters|
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