Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
We have recently shown [P. N. K. Deenapanray et al., Appl. Phys. Lett. 77, 626 (2000)] that four electron traps S1(Ec-0.23 eV), S2(Ec-0.46 eV), S3 (Ec-0.72 eV), and S4 (Ec-0.74 eV) are introduced in rapid thermally-annealed (RTA) SiO2-capped n-type GaAs epitaxial layers. In the present study, we have used deep level transient spectroscopy to investigate the electronic and annealing properties of these deep levels. The electron emission kinetics of S1 is enhanced by an electric field, and the...[Show more]
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