Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
-
Altmetric Citations
Deenapanray, Prakash; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe
Description
Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining cl
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2000 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/90417 |
| Source: | Electrochemical and Solid-State Letters |
| DOI: | 10.1149/1.1391000 |
Download
| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Deenapanray_Influence_of_Low-Temperature_2000.pdf | 60.9 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator
+61 2 6125 5111
The Australian National University, Canberra
CRICOS Provider : 00120C
ABN : 52 234 063 906
