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Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing

Deenapanray, Prakash; Tan, Hoe Hark; Fu, Lan; Jagadish, Chennupati


Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining cl

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.1391000


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