Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining cl
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|Source:||Electrochemical and Solid-State Letters|
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