Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
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Deenapanray, Prakash; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe
Description
Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining cl
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2000 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/90417 |
| Source: | Electrochemical and Solid-State Letters |
| DOI: | 10.1149/1.1391000 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Deenapanray_Influence_of_Low-Temperature_2000.pdf | 60.9 kB | Adobe PDF | Request a copy |
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