Skip navigation
Skip navigation

On the Segregation of Ca at SiO2/Si Interface During Oxygen Ion Bombardment

link to publisher version

  • Altmetric Citations

Deenapanray, Prakash; Petravic, Mladen

Description

Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO2/Si interface showed that Ca segregates predominantly at the Si side of the interface, within an a-Si layer adjacent to the continuous SiO2 layer. We explain the migration behaviour of Ca in thermodynamic terms...[Show more]

dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorPetravic, Mladen
dc.date.accessioned2015-12-13T23:19:45Z
dc.date.available2015-12-13T23:19:45Z
dc.identifier.issn0142-2421
dc.identifier.urihttp://hdl.handle.net/1885/90415
dc.description.abstractSegregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO2/Si interface showed that Ca segregates predominantly at the Si side of the interface, within an a-Si layer adjacent to the continuous SiO2 layer. We explain the migration behaviour of Ca in thermodynamic terms whereby segregation is driven by a large difference in solid solubilities of Ca in a-Si and SiO2. The influence of temperature on the segregation at the SiO2/a-Si interface is demonstrated. Evidence is also provided for the electric-field-induced migration of Ca. The discrepancy with previously reported results on the migration behaviour of Ca is discussed.
dc.publisherJohn Wiley & Sons Inc
dc.sourceSurface and Interface Analysis
dc.subjectKeywords: Calcium; Electric fields; Ion bombardment; Oxygen; Rutherford backscattering spectroscopy; Secondary ion mass spectrometry; Silica; Solubility; Stoichiometry; Thermal effects; Thermodynamics; Electric-field-induced migration; Silicon
dc.titleOn the Segregation of Ca at SiO2/Si Interface During Oxygen Ion Bombardment
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume29
dc.date.issued2000
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub20763
local.type.statusPublished Version
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPetravic, Mladen, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage160
local.bibliographicCitation.lastpage167
local.identifier.doi10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO;2-B
dc.date.updated2015-12-12T09:00:48Z
local.identifier.scopusID2-s2.0-0033908584
CollectionsANU Research Publications

Download

There are no files associated with this item.
Show simple item record


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator