Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was c
|Collections||ANU Research Publications|
|Source:||Surface and Interface Analysis|
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