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Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells

Deenapanray, Prakash; Fu, Lan; Petravic, Mladen; Jagadish, Chennupati; Gong, Bin; Lamb, Robert Norman

Description

The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was c

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/90414
Source: Surface and Interface Analysis
DOI: 10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D

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