Deenapanray, Prakash; Petravic, Mladen
The migration behavior of Li, K, and F during secondary ion mass spectrometry (SIMS) depth profiling was investigated in both n-and p-type Si using different oxygen bombardment conditions. The presence of an electric field across the surface oxide is shown to be the major driving force for both the segregation of Li and K at the SiO2/Si interface and the antisegregation of F into the oxide. Room temperature SIMS measurements revealed that K segregates at the oxide side of the SiO2/Si interface,...[Show more]
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