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Strong photosensitivity in tin-doped silica films

Gaff, K; Mariman, Elaine; Dall (previously Weijers), Tessica; Love, John; Boswell, Roderick


The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO2 were exposed to 2kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7 × 10-3 were observed on irradiation.

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
Source: Electronics Letters
DOI: 10.1049/el:20000574


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