Strong photosensitivity in tin-doped silica films
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Gaff, K; Mariman, Elaine; Dall (previously Weijers), Tessica; Love, John; Boswell, Roderick
Description
The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO2 were exposed to 2kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7 × 10-3 were observed on irradiation.
Collections | ANU Research Publications |
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Date published: | 2000 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/90261 |
Source: | Electronics Letters |
DOI: | 10.1049/el:20000574 |
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